NE5511279A
Item specifics
- Channel Type N
- Configuration Single
- ECCN (US) EAR99
- HTS 8541.29.00.95
- Material Si
- Maximum Continuous Drain Current (A) 3
- Maximum Drain Source Voltage (V) 20
- Maximum Frequency (MHz) 900
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) 6
- Maximum Gate Threshold Voltage (V) 2
- Maximum IDSS (uA) 0.1
- Maximum Operating Temperature (°C) 125
- Maximum Power Dissipation (mW) 20000
- Military No
- Minimum Operating Temperature (°C) -55
- Mounting Surface Mount
- Number of Elements per Chip 1
- Package Height 0.9
- Package Length 4.4(Max)
- Package Width 4.2(Max)
- Part Status Obsolete
- PCB changed 4
- Pin Count 4
- Process Technology LDMOS
- RoHS Status RoHS non-compliant
- Standard Package Name Module
- Supplier Package Case 79A
- Typical Forward Transconductance (S) 2.3
- Typical Power Gain (dB) 18.5
Product Description
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