BCR112E6327HTSA1

BCR112E6327HTSA1

Product Code: BCR112E6327HTSA1
Availability: In Stock
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Price: $19.12
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Item specifics

  • Base Part Number BCR112
  • Collector Base Voltage (VCBO) 50V
  • Collector Emitter Breakdown Voltage 50V
  • Collector Emitter Saturation Voltage 300mV
  • Collector Emitter Voltage (VCEO) 50V
  • Contact Plating Tin
  • Current - Collector Cutoff (Max) 100nA ICBO
  • Current Rating 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 5V
  • ECCN Code EAR99
  • Element Configuration Single
  • Frequency - Transition 140MHz
  • Halogen Free Not Halogen Free
  • Height 1.1mm
  • hFE Min 20
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 2.9mm
  • Max Breakdown Voltage 50V
  • Max Collector Current 100mA
  • Max Junction Temperature (Tj) 150°C
  • Max Operating Temperature 150°C
  • Max Power Dissipation 200mW
  • Min Operating Temperature -65°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Packaging Tape & Reel (TR)
  • Part Status Not For New Designs
  • Pbfree Code yes
  • Polarity NPN
  • Power Dissipation 200mW
  • Published 2011
  • Radiation Hardening No
  • Resistor - Base (R1) 4.7 k Ω
  • Resistor - Emitter Base (R2) 4.7 k Ω
  • RoHS Status ROHS3 Compliant
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Transistor Application SWITCHING
  • Transistor Type NPN - Pre-Biased
  • Transition Frequency 140MHz
  • Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
  • Voltage - Rated DC 50V
  • Width 1.3mm

Product Description

Infineon Technologies

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