AON7530
Item specifics
- Automotive Unknown
- Base Product Number AON75
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Quad Drain Triple Source
- Current - Continuous Drain (Id) @ 25°C 24A (Ta), 30A (Tc)
- Drain to Source Voltage (Vdss) 30 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- ECCN (US) EAR99
- EU RoHS Compliant
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 18.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 15 V
- Maximum Continuous Drain Current (A) 30
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 2.2
- Maximum IDSS (uA) 1
- Maximum Operating Temperature (°C) 150
- Maximum Power Dissipation (mW) 4100
- Mfr Alpha & Omega Semiconductor Inc.
- Minimum Operating Temperature (°C) -55
- Mounting Surface Mount
- Number of Elements per Chip 1
- Operating Temperature -55°C ~ 150°C
- Package Tape & Reel (TR)
- Package / Case 8-PowerVDFN
- Package Height 0.78
- Package Length 3
- Package Width 3
- Part Status NRND
- PCB changed 8
- Pin Count 8
- Power Dissipation (Max) 24W
- PPAP Unknown
- Process Technology AlphaMOS
- Product Status Active
- Rds On (Max) @ Id, Vgs 4.7mOhm @ 20A, 10V
- Supplier Device Package 8-DFN-EP (3x3)
- Supplier Package DFN-A EP
- Technology MOSFET (Metal Oxide)
- Typical Fall Time (ns) 4
- Typical Gate Charge @ 10V (nC) 18.8
- Typical Gate Charge @ Vgs (nC) 18.8@10V|[emailxa0protected]
- Typical Input Capacitance @ Vds (pF) 1320@15V
- Typical Rise Time (ns) 3
- Typical Turn-Off Delay Time (ns) 21
- Typical Turn-On Delay Time (ns) 7
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
Product Description
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