FDB52N20TM
Item specifics
- Avalanche Energy Rating (Eas) 2520 mJ
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) 52A
- Current - Continuous Drain (Id) @ 25°C 52A Tc
- Current Rating 52A
- Drain to Source Breakdown Voltage 200V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 150 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 5.08mm
- Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 9.98mm
- Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 5 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Power Dissipation 357W
- Power Dissipation-Max 357W Tc
- Published 2005
- Pulsed Drain Current-Max (IDM) 208A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 49m Ω @ 26A, 10V
- REACH SVHC No SVHC
- Resistance 49mOhm
- Rise Time 160ns
- RoHS Status ROHS3 Compliant
- Series UniFET™
- Terminal Form GULL WING
- Threshold Voltage 5V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 53 ns
- Turn-Off Delay Time 48 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250μA
- Voltage - Rated DC 200V
- Weight 1.31247g
- Width 10.16mm
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