IRF7205TRPBF
Item specifics
- Additional Feature LOGIC LEVEL COMPATIBLE
- Continuous Drain Current (ID) -4.6A
- Current - Continuous Drain (Id) @ 25°C 4.6A Ta
- Current Rating -5.3A
- Drain to Source Breakdown Voltage -30V
- Drain to Source Voltage (Vdss) 30V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- Dual Supply Voltage -30V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 71 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.4986mm
- Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 4.9784mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs -3 V
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 2.5W
- Power Dissipation-Max 2.5W Tc
- Published 1997
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 70m Ω @ 4.6A, 10V
- REACH SVHC No SVHC
- Recovery Time 100 ns
- Resistance 70mOhm
- Rise Time 21ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage -3V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 14 ns
- Turn-Off Delay Time 97 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Voltage - Rated DC -30V
- Width 3.9878mm
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