IRF3710ZSTRLPBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas) 200 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 59A
- Current - Continuous Drain (Id) @ 25°C 59A Tc
- Current Rating 59A
- Drain to Source Breakdown Voltage 100V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 100V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 56 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 5.084mm
- Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.668mm
- Max Junction Temperature (Tj) 175°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 160W
- Power Dissipation-Max 160W Tc
- Published 2003
- Pulsed Drain Current-Max (IDM) 240A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
- REACH SVHC No SVHC
- Recovery Time 75 ns
- Resistance 18MOhm
- Reverse Recovery Time 50 ns
- Rise Time 77ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form GULL WING
- Termination SMD/SMT
- Threshold Voltage 4V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 17 ns
- Turn-Off Delay Time 41 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 100V
- Width 9.65mm
Product Description
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