NTR4502PT1G
Item specifics
- Contact Plating Tin
- Continuous Drain Current (ID) 1.95A
- Current - Continuous Drain (Id) @ 25°C 1.13A Ta
- Current Rating -1.95A
- Drain to Source Breakdown Voltage -30V
- Drain to Source Voltage (Vdss) 30V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 12 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1mm
- Input Capacitance (Ciss) (Max) @ Vds 200pF @ 15V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 2.9mm
- Lifecycle Status ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Nominal Vgs -3 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Cut Tape (CT)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 1.25W
- Power Dissipation-Max 400mW Tj
- Published 2009
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 200m Ω @ 1.95A, 10V
- REACH SVHC No SVHC
- Resistance 155MOhm
- Rise Time 12ns
- RoHS Status ROHS3 Compliant
- Surface Mount YES
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage -3V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 5.2 ns
- Turn-Off Delay Time 19 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Voltage - Rated DC -30V
- Width 1.3mm
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