IRFR3504ZTRPBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas) 77 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 77A
- Current 42A
- Current - Continuous Drain (Id) @ 25°C 42A Tc
- Current Rating 42A
- Drain to Source Breakdown Voltage 40V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 38 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 2.26mm
- Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.7056mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 90W
- Power Dissipation-Max 90W Tc
- Published 2005
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 9m Ω @ 42A, 10V
- Resistance 9MOhm
- Rise Time 74ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 15 ns
- Turn-Off Delay Time 30 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage 40V
- Voltage - Rated DC 40V
- Width 6.22mm
Product Description
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