IRFL014NTRPBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY
- Case Connection DRAIN
- Continuous Drain Current (ID) 1.9A
- Current - Continuous Drain (Id) @ 25°C 1.9A Ta
- Current Rating 1.9A
- Drain Current-Max (Abs) (ID) 2.7A
- Drain to Source Breakdown Voltage 55V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 3.3 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.4478mm
- Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
- JESD-30 Code R-PDSO-G4
- Lead Free Lead Free
- Length 6.6802mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-261-4, TO-261AA
- Packaging Tape & Reel (TR)
- Part Status Active
- Power Dissipation 2.1W
- Power Dissipation-Max 1W Ta
- Published 2004
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 160m Ω @ 1.9A, 10V
- REACH SVHC No SVHC
- Recovery Time 61 ns
- Resistance 160mOhm
- Rise Time 7.1ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage 4V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 6.6 ns
- Turn-Off Delay Time 12 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 55V
- Width 3.7mm
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