BSS84PWH6327XTSA1
Item specifics
- Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Contact Plating Tin
- Continuous Drain Current (ID) -150mA
- Current - Continuous Drain (Id) @ 25°C 150mA Ta
- Current Rating -150mA
- Drain to Source Breakdown Voltage -60V
- Drain to Source Voltage (Vdss) 60V
- Drain-source On Resistance-Max 8Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 20.5 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Height 1mm
- Input Capacitance (Ciss) (Max) @ Vds 19.1pF @ 25V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 2mm
- Max Dual Supply Voltage -60V
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case SC-70, SOT-323
- Packaging Cut Tape (CT)
- Part Status Active
- Pbfree Code yes
- Pin Count 3
- Power Dissipation 300mW
- Power Dissipation-Max 300mW Ta
- Published 2000
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 8 Ω @ 150mA, 10V
- Rise Time 16.2ns
- RoHS Status ROHS3 Compliant
- Series SIPMOS®
- Terminal Form GULL WING
- Terminal Position DUAL
- Transistor Element Material SILICON
- Turn On Delay Time 6.7 ns
- Turn-Off Delay Time 8.6 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2V @ 20μA
- Voltage - Rated DC -60V
- Width 1.25mm
Product Description
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