IPW60R060P7XKSA1

IPW60R060P7XKSA1

Product Code: IPW60R060P7XKSA1
Availability: In Stock
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Price: $19.19
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Item specifics

  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 48A
  • Current - Continuous Drain (Id) @ 25°C 48A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drain-source On Resistance-Max 0.06Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 25.4mm
  • Input Capacitance (Ciss) (Max) @ Vds 2895pF @ 400V
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Max Junction Temperature (Tj) 150°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 164W
  • Power Dissipation-Max 164W Tc
  • Published 2014
  • Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
  • RoHS Status ROHS3 Compliant
  • Series CoolMOS™ P7
  • Surface Mount NO
  • Terminal Finish Tin (Sn)
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 23 ns
  • Turn-Off Delay Time 79 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 800μA

Product Description

Infineon Technologies

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