CSD19534Q5A
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 55 mJ
- Base Part Number CSD19534
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) 10A
- Current - Continuous Drain (Id) @ 25°C 50A Ta
- Drain to Source Breakdown Voltage 100V
- Drive Voltage (Max Rds On,Min Rds On) 6V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 6 ns
- Feedback Cap-Max (Crss) 7.4 pF
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.1mm
- Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
- JESD-609 Code e3
- Lead Free Contains Lead
- Length 4.9mm
- Lifecycle Status ACTIVE (Last Updated: 2 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-PowerTDFN
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 3.2W
- Power Dissipation-Max 3.2W Ta 63W Tc
- Rds On (Max) @ Id, Vgs 15.1m Ω @ 10A, 10V
- Reach Compliance Code not_compliant
- Rise Time 14ns
- RoHS Status ROHS3 Compliant
- Series NexFET™
- Terminal Form NO LEAD
- Terminal Position DUAL
- Thickness 1mm
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 9 ns
- Turn-Off Delay Time 20 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.4V @ 250μA
- Width 6mm
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