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FDP26N40
FDP26N40

FDP26N40

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Brand:
Product Code: FDP26N40
Availability: In Stock
Viewed 3 times
Price: $3.25
0 sold. Only 13111 remain

Item specifics

  • Additional Feature AVALANCHE RATED
  • Contact Plating Tin
  • Continuous Drain Current (ID) 26A
  • Current - Continuous Drain (Id) @ 25°C 26A Tc
  • Drain to Source Breakdown Voltage 400V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 66 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 15.38mm
  • Input Capacitance (Ciss) (Max) @ Vds 3185pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 10.1mm
  • Lifecycle Status ACTIVE (Last Updated: 3 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Power Dissipation 265W
  • Power Dissipation-Max 265W Tc
  • Published 2013
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 160m Ω @ 13A, 10V
  • REACH SVHC No SVHC
  • Resistance 160MOhm
  • Rise Time 100ns
  • RoHS Status ROHS3 Compliant
  • Series UniFET™
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 45 ns
  • Turn-Off Delay Time 115 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Weight 1.8g
  • Width 4.7mm

Product Description

ON Semiconductor

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