IRFI3205PBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Avalanche Energy Rating (Eas) 480 mJ
- Case Connection ISOLATED
- Continuous Drain Current (ID) 64A
- Current - Continuous Drain (Id) @ 25°C 64A Tc
- Current Rating 64A
- Drain Current-Max (Abs) (ID) 56A
- Drain to Source Breakdown Voltage 55V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 55V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 70 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 9.8mm
- Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
- Isolation Voltage 2kV
- JEDEC-95 Code TO-220AB
- Lead Free Lead Free
- Length 10.7442mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3 Full Pack
- Packaging Tube
- Part Status Active
- Power Dissipation 63W
- Power Dissipation-Max 63W Tc
- Published 1997
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 8m Ω @ 34A, 10V
- REACH SVHC No SVHC
- Recovery Time 170 ns
- Resistance 8mOhm
- Rise Time 100ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Termination Through Hole
- Threshold Voltage 4V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 14 ns
- Turn-Off Delay Time 43 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 55V
- Width 4.826mm
Product Description
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