FCB070N65S3
Item specifics
- Additional Feature AVALANCHE RATED, HIGH VOLTAGE
- Case Connection DRAIN
- Continuous Drain Current (ID) 44A
- Current - Continuous Drain (Id) @ 25°C 44A Tc
- Drain to Source Breakdown Voltage 650V
- Drain-source On Resistance-Max 0.07Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 400V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lifecycle Status ACTIVE (Last Updated: 3 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 245
- Power Dissipation 312W
- Power Dissipation-Max 312W Tc
- Published 2016
- Rds On (Max) @ Id, Vgs 70m Ω @ 22A, 10V
- Reach Compliance Code not_compliant
- REACH SVHC No SVHC
- RoHS Status ROHS3 Compliant
- Series SuperFET® III
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Threshold Voltage 4.5V
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 26 ns
- Turn-Off Delay Time 89 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 4.4mA
- Weight 1.31247g
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