FQP4N90C

FQP4N90C

Product Code: FQP4N90C
Availability: In Stock
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Price: $2.03
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Item specifics

  • Avalanche Energy Rating (Eas) 570 mJ
  • Contact Plating Tin
  • Continuous Drain Current (ID) 4A
  • Current - Continuous Drain (Id) @ 25°C 4A Tc
  • Current Rating 4A
  • Drain Current-Max (Abs) (ID) 4A
  • Drain to Source Breakdown Voltage 900V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 35 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 9.2mm
  • Input Capacitance (Ciss) (Max) @ Vds 960pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 9.9mm
  • Lifecycle Status ACTIVE (Last Updated: 3 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 140W
  • Power Dissipation-Max 140W Tc
  • Published 2013
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 4.2 Ω @ 2A, 10V
  • REACH SVHC No SVHC
  • Rise Time 50ns
  • RoHS Status ROHS3 Compliant
  • Series QFET®
  • Threshold Voltage 5V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 25 ns
  • Turn-Off Delay Time 40 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Voltage - Rated DC 900V
  • Weight 1.8g
  • Width 4.5mm

Product Description

ON Semiconductor

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