IRF6218PBF

IRF6218PBF

Product Code: IRF6218PBF
Availability: In Stock
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Price: $6.55
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Item specifics

  • Contact Plating Tin
  • Continuous Drain Current (ID) -27A
  • Current - Continuous Drain (Id) @ 25°C 27A Tc
  • Current Rating -27A
  • Drain to Source Breakdown Voltage -150V
  • Drain to Source Resistance 150mOhm
  • Drain to Source Voltage (Vdss) 150V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Dual Supply Voltage -150V
  • Element Configuration Single
  • Fall Time (Typ) 30 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 15.24mm
  • Input Capacitance 2.21nF
  • Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
  • Lead Free Lead Free
  • Length 10.5156mm
  • Max Operating Temperature 175°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Nominal Vgs -5 V
  • Number of Elements 1
  • Number of Pins 3
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Not For New Designs
  • Power Dissipation 250W
  • Power Dissipation-Max 250W Tc
  • Published 2003
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V
  • Rds On Max 150 mΩ
  • REACH SVHC No SVHC
  • Rise Time 70ns
  • RoHS Status ROHS3 Compliant
  • Series HEXFET®
  • Supplier Device Package TO-220AB
  • Threshold Voltage -5V
  • Turn On Delay Time 21 ns
  • Turn-Off Delay Time 35 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Voltage - Rated DC -150V
  • Width 4.69mm

Product Description

Infineon Technologies

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