NTK3139PT1G
Item specifics
- Contact Plating Tin
- Continuous Drain Current (ID) 780mA
- Current - Continuous Drain (Id) @ 25°C 660mA Ta
- Drain Current-Max (Abs) (ID) 0.78A
- Drain to Source Breakdown Voltage -20V
- Drain to Source Voltage (Vdss) 20V
- Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
- Dual Supply Voltage -20V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 5.8 ns
- FET Type P-Channel
- Gate to Source Voltage (Vgs) 6V
- Height 550μm
- Input Capacitance (Ciss) (Max) @ Vds 170pF @ 16V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 1.25mm
- Lifecycle Status ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case SOT-723
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 310mW
- Power Dissipation-Max 310mW Ta
- Published 2006
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 480m Ω @ 780mA, 4.5V
- REACH SVHC No SVHC
- Resistance 380mOhm
- Rise Time 5.8ns
- RoHS Status ROHS3 Compliant
- Surface Mount YES
- Terminal Form FLAT
- Terminal Position DUAL
- Termination SMD/SMT
- Threshold Voltage -1.2V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 9 ns
- Turn-Off Delay Time 32.7 ns
- Vgs (Max) ±6V
- Vgs(th) (Max) @ Id 1.2V @ 250μA
- Width 850μm
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