IRLI530NPBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- Case Connection ISOLATED
- Contact Plating Tin
- Continuous Drain Current (ID) 12A
- Current - Continuous Drain (Id) @ 25°C 12A Tc
- Current Rating 11A
- Drain to Source Breakdown Voltage 100V
- Drive Voltage (Max Rds On,Min Rds On) 4V 10V
- Dual Supply Voltage 100V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 26 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
- Gate to Source Voltage (Vgs) 16V
- Height 16.12mm
- Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
- Isolation Voltage 2kV
- JEDEC-95 Code TO-220AB
- Lead Free Contains Lead, Lead Free
- Length 10.6172mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 2 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3 Full Pack
- Packaging Tube
- Part Status Not For New Designs
- Power Dissipation 33W
- Power Dissipation-Max 41W Tc
- Published 2004
- Pulsed Drain Current-Max (IDM) 60A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 100m Ω @ 9A, 10V
- REACH SVHC No SVHC
- Recovery Time 210 ns
- Resistance 120mOhm
- Rise Time 53ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Threshold Voltage 2V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 7.2 ns
- Turn-Off Delay Time 30 ns
- Vgs (Max) ±16V
- Vgs(th) (Max) @ Id 2V @ 250μA
- Voltage - Rated DC 100V
- Width 4.826mm
Product Description
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