STP28N65M2

STP28N65M2

Product Code: STP28N65M2
Availability: In Stock
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Price: $18.29
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Item specifics

  • Avalanche Energy Rating (Eas) 760 mJ
  • Base Part Number STP28N
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 20A
  • Current - Continuous Drain (Id) @ 25°C 20A Tc
  • Drain to Source Breakdown Voltage 650V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Height 19.68mm
  • Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
  • JEDEC-95 Code TO-220AB
  • Lead Free Lead Free
  • Length 10.4mm
  • Lifecycle Status ACTIVE (Last Updated: 7 months ago)
  • Max Junction Temperature (Tj) 150°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 170W
  • Power Dissipation-Max 170W Tc
  • Pulsed Drain Current-Max (IDM) 80A
  • Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ M2
  • Threshold Voltage 3V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 13.4 ns
  • Turn-Off Delay Time 59 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Width 4.6mm

Product Description

STMicroelectronics

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