CSD18543Q3AT
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 55 mJ
- Base Part Number CSD18543
- Case Connection DRAIN
- Continuous Drain Current (ID) 12A
- Current - Continuous Drain (Id) @ 25°C 12A Ta 60A Tc
- Drain to Source Breakdown Voltage 60V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- Element Configuration Single
- Feedback Cap-Max (Crss) 6.2 pF
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 900μm
- Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 30V
- JESD-609 Code e3
- Length 3.3mm
- Lifecycle Status ACTIVE (Last Updated: 4 days ago)
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-PowerVDFN
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Power Dissipation 2.8W
- Power Dissipation-Max 66W Tc
- Rds On (Max) @ Id, Vgs 15.6m Ω @ 12A, 4.5V
- RoHS Status ROHS3 Compliant
- Series NexFET™
- Surface Mount YES
- Terminal Finish Matte Tin (Sn)
- Terminal Form FLAT
- Terminal Position DUAL
- Thickness 800μm
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 9 ns
- Turn-Off Delay Time 8 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.7V @ 250μA
- Width 3.3mm
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