STFW4N150

STFW4N150

Product Code: STFW4N150
Availability: In Stock
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Price: $1.37
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Item specifics

  • Base Part Number STFW
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Contact Plating Tin
  • Continuous Drain Current (ID) 4A
  • Current - Continuous Drain (Id) @ 25°C 4A Tc
  • Drain Current-Max (Abs) (ID) 4A
  • Drain to Source Breakdown Voltage 1.5kV
  • Drain to Source Voltage (Vdss) 1500V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 45 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 26.7mm
  • Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 15.7mm
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case ISOWATT218FX
  • Packaging Tube
  • Part Status Active
  • Pin Count 3
  • Power Dissipation 63W
  • Power Dissipation-Max 63W Tc
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 7 Ω @ 2A, 10V
  • REACH SVHC No SVHC
  • Resistance 7Ohm
  • Rise Time 30ns
  • RoHS Status ROHS3 Compliant
  • Series PowerMESH™
  • Terminal Position SINGLE
  • Threshold Voltage 4V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 35 ns
  • Turn-Off Delay Time 45 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Width 5.7mm

Product Description

STMicroelectronics

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