STB160N75F3
Item specifics
- Base Part Number STB160N
- Continuous Drain Current (ID) 60A
- Current - Continuous Drain (Id) @ 25°C 120A Tc
- Drain to Source Breakdown Voltage 75V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 75V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 15 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 4.6mm
- Input Capacitance (Ciss) (Max) @ Vds 6750pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.75mm
- Lifecycle Status ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 245
- Pin Count 3
- Power Dissipation 330W
- Power Dissipation-Max 330W Tc
- Pulsed Drain Current-Max (IDM) 480A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
- REACH SVHC No SVHC
- Resistance 3.7MOhm
- Rise Time 65ns
- RoHS Status ROHS3 Compliant
- Series STripFET™
- Terminal Finish Matte Tin (Sn) - annealed
- Terminal Form GULL WING
- Termination SMD/SMT
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 22 ns
- Turn-Off Delay Time 100 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Width 10.4mm
Product Description
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