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CSD19538Q3A
CSD19538Q3A

CSD19538Q3A

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Product Code: CSD19538Q3A
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Base Part Number CSD19538
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 15A
  • Current - Continuous Drain (Id) @ 25°C 15A Ta
  • Drain Current-Max (Abs) (ID) 4.9A
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.072Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 6V 10V
  • DS Breakdown Voltage-Min 100V
  • ECCN Code EAR99
  • Element Configuration Single
  • Feedback Cap-Max (Crss) 16.4 pF
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 3.3mm
  • Lifecycle Status ACTIVE (Last Updated: 3 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 8
  • Number of Terminations 5
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case 8-PowerVDFN
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Power Dissipation-Max 2.8W Ta 23W Tc
  • Pulsed Drain Current-Max (IDM) 37A
  • Rds On (Max) @ Id, Vgs 59m Ω @ 5A, 10V
  • RoHS Status ROHS3 Compliant
  • Series NexFET™
  • Terminal Finish Matte Tin (Sn)
  • Terminal Form FLAT
  • Terminal Position DUAL
  • Thickness 800μm
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.8V @ 250μA
  • Width 3.3mm

Product Description

Texas Instruments

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