IRL7472L1TRPBF
Item specifics
- Avalanche Energy Rating (Eas) 765 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 68A
- Current - Continuous Drain (Id) @ 25°C 375A Tc
- Drain to Source Breakdown Voltage 40V
- Drain-source On Resistance-Max 0.00045Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 330nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Height 740μm
- Input Capacitance (Ciss) (Max) @ Vds 20082pF @ 25V
- JESD-30 Code R-XBCC-N9
- Lead Free Lead Free
- Length 9.15mm
- Max Junction Temperature (Tj) 175°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 2
- Number of Terminations 9
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case DirectFET™ Isometric L8
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 3.8W
- Power Dissipation-Max 3.8W Ta 341W Tc
- Published 2009
- Rds On (Max) @ Id, Vgs 0.59m Ω @ 195A, 10V
- REACH SVHC No SVHC
- RoHS Status ROHS3 Compliant
- Series StrongIRFET™
- Terminal Form NO LEAD
- Terminal Position BOTTOM
- Threshold Voltage 1V
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 68 ns
- Turn-Off Delay Time 174 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
- Width 7.1mm
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