IRF6614TRPBF
Item specifics
- Avalanche Energy Rating (Eas) 22 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 10.1A
- Current - Continuous Drain (Id) @ 25°C 12.7A Ta 55A Tc
- Current Rating 12.7A
- Drain to Source Breakdown Voltage 40V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 3.6 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Height 506μm
- Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 20V
- JESD-30 Code R-XBCC-N3
- JESD-609 Code e1
- Lead Free Lead Free
- Length 4.826mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 5
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -40°C~150°C TJ
- Package / Case DirectFET™ Isometric ST
- Packaging Tape & Reel (TR)
- Part Status Active
- Power Dissipation 42W
- Power Dissipation-Max 2.1W Ta 42W Tc
- Published 2006
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 8.3m Ω @ 12.7A, 10V
- REACH SVHC No SVHC
- Resistance 8.3MOhm
- Rise Time 27ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position BOTTOM
- Threshold Voltage 1.8V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 13 ns
- Turn-Off Delay Time 18 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.25V @ 250μA
- Voltage - Rated DC 40V
- Width 3.95mm
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