STB6NK90ZT4
Item specifics
- Additional Feature AVALANCHE RATED, HIGH VOLTAGE
- Base Part Number STB6N
- Continuous Drain Current (ID) 5.8A
- Current - Continuous Drain (Id) @ 25°C 5.8A Tc
- Current Rating 5.8A
- Drain to Source Breakdown Voltage 900V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 20 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 60.5nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 4.6mm
- Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.4mm
- Lifecycle Status ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 3.75 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 245
- Pin Count 3
- Power Dissipation 140W
- Power Dissipation-Max 140W Tc
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2 Ω @ 2.9A, 10V
- REACH SVHC No SVHC
- Resistance 1.56Ohm
- Rise Time 45ns
- RoHS Status ROHS3 Compliant
- Series SuperMESH™
- Terminal Finish Matte Tin (Sn) - annealed
- Terminal Form GULL WING
- Threshold Voltage 3.75V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 17 ns
- Turn-Off Delay Time 20 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 100μA
- Voltage - Rated DC 900V
- Weight 4.535924g
- Width 9.35mm
Product Description
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