IRFB41N15DPBF
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 470 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 41A
- Current - Continuous Drain (Id) @ 25°C 41A Tc
- Current Rating 41A
- Drain to Source Breakdown Voltage 150V
- Drain-source On Resistance-Max 0.045Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 150V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 14 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 8.763mm
- Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Contains Lead, Lead Free
- Length 10.5156mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 5.5 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Not For New Designs
- Power Dissipation 200W
- Power Dissipation-Max 200W Tc
- Published 2003
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 45m Ω @ 25A, 10V
- REACH SVHC No SVHC
- Recovery Time 260 ns
- Rise Time 63ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Termination Through Hole
- Threshold Voltage 5.5V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 16 ns
- Turn-Off Delay Time 25 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5.5V @ 250μA
- Voltage - Rated DC 150V
- Width 4.69mm
Product Description
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