BSC014N03LSGATMA1
Item specifics
- Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Avalanche Energy Rating (Eas) 290 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 34A
- Current - Continuous Drain (Id) @ 25°C 34A Ta 100A Tc
- Drain-source On Resistance-Max 0.0021Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 131nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 15V
- JESD-30 Code R-PDSO-F5
- JESD-609 Code e3
- Lead Free Contains Lead
- Max Dual Supply Voltage 30V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-PowerTDFN
- Packaging Tape & Reel (TR)
- Part Status Not For New Designs
- Pbfree Code no
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 8
- Power Dissipation 139W
- Power Dissipation-Max 2.5W Ta 139W Tc
- Published 2006
- Pulsed Drain Current-Max (IDM) 400A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 1.4m Ω @ 30A, 10V
- Reach Compliance Code not_compliant
- Rise Time 8.6ns
- RoHS Status ROHS3 Compliant
- Series OptiMOS™
- Terminal Finish Tin (Sn)
- Terminal Form FLAT
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 13 ns
- Turn-Off Delay Time 51 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.2V @ 250μA
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