STP20NM60FP
Item specifics
- Avalanche Energy Rating (Eas) 650 mJ
- Base Part Number STP20N
- Case Connection ISOLATED
- Continuous Drain Current (ID) 20A
- Current - Continuous Drain (Id) @ 25°C 20A Tc
- Current Rating 20A
- Drain to Source Breakdown Voltage 600V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 11 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 9.3mm
- Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.4mm
- Lifecycle Status ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature 150°C TJ
- Package / Case TO-220-3 Full Pack
- Packaging Tube
- Part Status Active
- Peak Reflow Temperature (Cel) 245
- Pin Count 3
- Power Dissipation 45W
- Power Dissipation-Max 45W Tc
- Pulsed Drain Current-Max (IDM) 80A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
- REACH SVHC No SVHC
- Resistance 290mOhm
- Rise Time 20ns
- RoHS Status ROHS3 Compliant
- Series MDmesh™
- Terminal Finish Matte Tin (Sn) - annealed
- Threshold Voltage 4V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 25 ns
- Turn-Off Delay Time 42 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250μA
- Voltage - Rated DC 650V
- Width 4.6mm
Product Description
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