IRF3711PBF
Item specifics
- Avalanche Energy Rating (Eas) 460 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 110A
- Current - Continuous Drain (Id) @ 25°C 110A Tc
- Current Rating 110A
- Drain to Source Breakdown Voltage 20V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- Dual Supply Voltage 20V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 12 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Height 8.763mm
- Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V
- JEDEC-95 Code TO-220AB
- Lead Free Lead Free
- Length 10.5156mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 3 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Obsolete
- Power Dissipation 120W
- Power Dissipation-Max 3.1W Ta 120W Tc
- Published 2004
- Pulsed Drain Current-Max (IDM) 440A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
- REACH SVHC No SVHC
- Resistance 6MOhm
- Rise Time 220ns
- RoHS Status RoHS Compliant
- Series HEXFET®
- Termination Through Hole
- Threshold Voltage 3V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 12 ns
- Turn-Off Delay Time 17 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Voltage - Rated DC 20V
- Width 4.69mm
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