IRFP3077PBF
Item specifics
- Avalanche Energy Rating (Eas) 200 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 120A
- Current - Continuous Drain (Id) @ 25°C 120A Tc
- Drain Current-Max (Abs) (ID) 200A
- Drain to Source Breakdown Voltage 75V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 75V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 77 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 20.7mm
- Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 50V
- JEDEC-95 Code TO-247AC
- Lead Free Lead Free
- Length 15.87mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-247-3
- Packaging Tube
- Part Status Active
- Power Dissipation 340W
- Power Dissipation-Max 340W Tc
- Published 2007
- Pulsed Drain Current-Max (IDM) 850A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 3.3m Ω @ 75A, 10V
- REACH SVHC No SVHC
- Recovery Time 63 ns
- Resistance 3.3MOhm
- Rise Time 76ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Termination Through Hole
- Threshold Voltage 4V
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 15 ns
- Turn-Off Delay Time 40 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Width 5.3086mm
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