SQJ409EP-T1_GE3

SQJ409EP-T1_GE3

Product Code: SQJ409EP-T1_GE3
Availability: In Stock
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Price: $18.80
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Item specifics

  • Avalanche Energy Rating (Eas) 84 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) -60A
  • Current - Continuous Drain (Id) @ 25°C 60A Tc
  • Drain to Source Breakdown Voltage -40V
  • Drain to Source Voltage (Vdss) 40V
  • Drain-source On Resistance-Max 0.007Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 1.267mm
  • Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 25V
  • JESD-30 Code R-PSSO-G4
  • Max Junction Temperature (Tj) 175°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case PowerPAK® SO-8
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 68W
  • Power Dissipation-Max 68W Tc
  • Rds On (Max) @ Id, Vgs 7m Ω @ 10A, 10V
  • Reach Compliance Code unknown
  • RoHS Status ROHS3 Compliant
  • Series Automotive, AEC-Q101, TrenchFET®
  • Surface Mount YES
  • Terminal Form GULL WING
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Turn On Delay Time 23 ns
  • Turn-Off Delay Time 75 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.5V @ 250μA

Product Description

Vishay Siliconix

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