FCP16N60
Item specifics
- Avalanche Energy Rating (Eas) 450 mJ
- Continuous Drain Current (ID) 16A
- Current - Continuous Drain (Id) @ 25°C 16A Tc
- Current Rating 16A
- Drain to Source Breakdown Voltage 600V
- Drain-source On Resistance-Max 0.26Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 600V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 90 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 9.4mm
- HTS Code 8541.29.00.95
- Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.1mm
- Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 5 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Not For New Designs
- Pbfree Code yes
- Power Dissipation 167W
- Power Dissipation-Max 167W Tc
- Published 2005
- Pulsed Drain Current-Max (IDM) 48A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 260m Ω @ 8A, 10V
- REACH SVHC No SVHC
- Rise Time 130ns
- RoHS Status ROHS3 Compliant
- Series SuperFET™
- Terminal Finish Tin (Sn)
- Termination Through Hole
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 42 ns
- Turn-Off Delay Time 165 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250μA
- Voltage - Rated DC 600V
- Weight 1.8g
- Width 4.7mm
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