IRFSL4321PBF
Item specifics
- Case Connection DRAIN
- Continuous Drain Current (ID) 83A
- Current - Continuous Drain (Id) @ 25°C 85A Tc
- Current Rating 83A
- Drain Current-Max (Abs) (ID) 75A
- Drain to Source Breakdown Voltage 150V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 35 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds 4460pF @ 25V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.668mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging Tube
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 330W
- Power Dissipation-Max 350W Tc
- Published 2010
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 15m Ω @ 33A, 10V
- REACH SVHC No SVHC
- Rise Time 60ns
- RoHS Status RoHS Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Threshold Voltage 5V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 18 ns
- Turn-Off Delay Time 25 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250μA
- Voltage - Rated DC 150V
- Width 4.826mm
Product Description
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