FCD600N60Z
Item specifics
- Base Part Number FCD600N60
- Case Connection DRAIN
- Continuous Drain Current (ID) 7.4A
- Current - Continuous Drain (Id) @ 25°C 7.4A Tc
- Drain to Source Breakdown Voltage 650V
- Drain to Source Voltage (Vdss) 600V
- Drain-source On Resistance-Max 0.6Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 8 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 2.39mm
- Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.73mm
- Lifecycle Status ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Digi-Reel®
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 89W
- Power Dissipation-Max 89W Tc
- Published 2010
- Pulsed Drain Current-Max (IDM) 22.2A
- Rds On (Max) @ Id, Vgs 600m Ω @ 3.7A, 10V
- Reach Compliance Code not_compliant
- Rise Time 7ns
- RoHS Status ROHS3 Compliant
- Series SuperFET® II
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 13 ns
- Turn-Off Delay Time 39 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.5V @ 250μA
- Weight 260.37mg
- Width 6.22mm
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