STB33N65M2

STB33N65M2

Product Code: STB33N65M2
Availability: In Stock
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Price: $3.05
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Item specifics

  • Avalanche Energy Rating (Eas) 780 mJ
  • Base Part Number STB33N
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 24A
  • Current - Continuous Drain (Id) @ 25°C 24A Tc
  • Drain to Source Voltage (Vdss) 650V
  • Drain-source On Resistance-Max 0.14Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 650V
  • ECCN Code EAR99
  • Element Configuration Single
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Height 4.6mm
  • Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 100V
  • JESD-30 Code R-PSSO-G2
  • Length 10.4mm
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Cut Tape (CT)
  • Part Status Active
  • Power Dissipation-Max 190W Tc
  • Pulsed Drain Current-Max (IDM) 96A
  • Rds On (Max) @ Id, Vgs 140m Ω @ 12A, 10V
  • Reach Compliance Code not_compliant
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ M2
  • Terminal Form GULL WING
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 13.5 ns
  • Turn-Off Delay Time 72.5 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Width 9.35mm

Product Description

STMicroelectronics

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