ZXMN6A25KTC
Item specifics
- Case Connection DRAIN
- Continuous Drain Current (ID) 10.7A
- Current - Continuous Drain (Id) @ 25°C 7A Ta
- Drain Current-Max (Abs) (ID) 7A
- Drain to Source Voltage (Vdss) 60V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- DS Breakdown Voltage-Min 60V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 10.6 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 2.39mm
- Input Capacitance (Ciss) (Max) @ Vds 1063pF @ 30V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.73mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code no
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 2.11W
- Power Dissipation-Max 2.11W Ta
- Published 1997
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 50m Ω @ 3.6A, 10V
- REACH SVHC No SVHC
- Resistance 50mOhm
- Rise Time 4ns
- RoHS Status ROHS3 Compliant
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 3.8 ns
- Turn-Off Delay Time 26.2 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3V @ 250μA
- Weight 3.949996g
- Width 6.22mm
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