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IPT60R050G7XTMA1
IPT60R050G7XTMA1

IPT60R050G7XTMA1

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Product Code: IPT60R050G7XTMA1
Availability: In Stock
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Price: $0.66
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Item specifics

  • Avalanche Energy Rating (Eas) 159 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 44A Tc
  • Drain Current-Max (Abs) (ID) 44A
  • Drain to Source Voltage (Vdss) 650V
  • Drain-source On Resistance-Max 0.05Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 600V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
  • JESD-30 Code R-PSSO-F3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case 8-PowerSFN
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 245W Tc
  • Published 2014
  • Pulsed Drain Current-Max (IDM) 135A
  • Rds On (Max) @ Id, Vgs 50m Ω @ 15.9A, 10V
  • RoHS Status ROHS3 Compliant
  • Series CoolMOS™ G7
  • Surface Mount YES
  • Terminal Form FLAT
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 800μA

Product Description

Infineon Technologies

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