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FCH35N60
FCH35N60

FCH35N60

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Brand:
Product Code: FCH35N60
Availability: In Stock
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Price: $9.47
0 sold. Only 3254 remain

Item specifics

  • Continuous Drain Current (ID) 35A
  • Current - Continuous Drain (Id) @ 25°C 35A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drain-source On Resistance-Max 0.098Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 73 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Height 20.82mm
  • Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 25V
  • JESD-609 Code e3
  • Length 15.87mm
  • Lifecycle Status ACTIVE (Last Updated: 1 week ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Power Dissipation 312.5W
  • Power Dissipation-Max 312.5W Tc
  • Published 2013
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 98m Ω @ 17.5A, 10V
  • REACH SVHC No SVHC
  • Rise Time 120ns
  • RoHS Status ROHS3 Compliant
  • Series SuperMOS™
  • Terminal Finish Tin (Sn)
  • Threshold Voltage 3V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 34 ns
  • Turn-Off Delay Time 105 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 250μA
  • Weight 6.39g
  • Width 4.82mm

Product Description

ON Semiconductor

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