STP100N10F7

STP100N10F7

Product Code: STP100N10F7
Availability: In Stock
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Price: $3.45
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Item specifics

  • Avalanche Energy Rating (Eas) 400 mJ
  • Base Part Number STP100
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 80A
  • Current - Continuous Drain (Id) @ 25°C 80A Tc
  • Drain to Source Breakdown Voltage 100V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 16 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Height 15.75mm
  • Input Capacitance (Ciss) (Max) @ Vds 4369pF @ 50V
  • JEDEC-95 Code TO-220AB
  • Lead Free Lead Free
  • Length 10.4mm
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Power Dissipation 150W
  • Power Dissipation-Max 150W Tc
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
  • REACH SVHC No SVHC
  • Resistance 8MOhm
  • Rise Time 40ns
  • RoHS Status ROHS3 Compliant
  • Series DeepGATE™, STripFET™ VII
  • Threshold Voltage 4.5V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 27 ns
  • Turn-Off Delay Time 46 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4.5V @ 250μA
  • Width 4.6mm

Product Description

STMicroelectronics

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