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IPP410N30NAKSA1
IPP410N30NAKSA1

IPP410N30NAKSA1

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Product Code: IPP410N30NAKSA1
Availability: In Stock
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Price: $4.20
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Item specifics

  • Avalanche Energy Rating (Eas) 240 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 44A
  • Current - Continuous Drain (Id) @ 25°C 44A Tc
  • Drain to Source Breakdown Voltage 300V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Halogen Free Halogen Free
  • Height 20.7mm
  • Input Capacitance (Ciss) (Max) @ Vds 7180pF @ 100V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • Lead Free Contains Lead
  • Max Dual Supply Voltage 300V
  • Max Junction Temperature (Tj) 175°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 300W
  • Power Dissipation-Max 300W Tc
  • Published 2013
  • Rds On (Max) @ Id, Vgs 41m Ω @ 44A, 10V
  • RoHS Status ROHS3 Compliant
  • Series OptiMOS™
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Turn On Delay Time 16 ns
  • Turn-Off Delay Time 43 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 270μA

Product Description

Infineon Technologies

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