IPD30N06S223ATMA2

IPD30N06S223ATMA2

Product Code: IPD30N06S223ATMA2
Availability: In Stock
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Price: $4.34
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Item specifics

  • Avalanche Energy Rating (Eas) 150 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 30A
  • Current - Continuous Drain (Id) @ 25°C 30A Tc
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 18 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Halogen Free Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds 901pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • Lead Free Contains Lead
  • Max Dual Supply Voltage 55V
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Power Dissipation-Max 100W Tc
  • Published 2006
  • Pulsed Drain Current-Max (IDM) 120A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 23m Ω @ 21A, 10V
  • Rise Time 23ns
  • RoHS Status ROHS3 Compliant
  • Series OptiMOS™
  • Terminal Form GULL WING
  • Terminal Position SINGLE
  • Transistor Element Material SILICON
  • Turn On Delay Time 10 ns
  • Turn-Off Delay Time 24 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 50μA

Product Description

Infineon Technologies

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