STF23NM50N

STF23NM50N

Product Code: STF23NM50N
Availability: In Stock
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Price: $3.64
0 sold. Only 950 remain

Item specifics

  • Avalanche Energy Rating (Eas) 254 mJ
  • Base Part Number STF23
  • Case Connection ISOLATED
  • Continuous Drain Current (ID) 17A
  • Current - Continuous Drain (Id) @ 25°C 17A Tc
  • Drain to Source Breakdown Voltage 500V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 29 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Height 16.4mm
  • Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 50V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Length 10.4mm
  • Lifecycle Status ACTIVE (Last Updated: 7 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-220-3 Full Pack
  • Packaging Tube
  • Part Status Active
  • Pin Count 3
  • Power Dissipation 30W
  • Power Dissipation-Max 30W Tc
  • Pulsed Drain Current-Max (IDM) 68A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 190m Ω @ 8.5A, 10V
  • REACH SVHC No SVHC
  • Resistance 190MOhm
  • Rise Time 19ns
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ II
  • Terminal Finish Matte Tin (Sn) - annealed
  • Threshold Voltage 3V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 6.6 ns
  • Turn-Off Delay Time 71 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Width 4.6mm

Product Description

STMicroelectronics

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