AUIRF7732S2TR

AUIRF7732S2TR

Product Code: AUIRF7732S2TR
Availability: In Stock
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Price: $8.53
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Item specifics

  • Avalanche Energy Rating (Eas) 45 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 14A
  • Current - Continuous Drain (Id) @ 25°C 14A Ta
  • Drain Current-Max (Abs) (ID) 55A
  • Drain to Source Breakdown Voltage 40V
  • Drain-source On Resistance-Max 0.00695Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 37 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
  • Gate to Source Voltage (Vgs) 16V
  • Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
  • JESD-30 Code R-XBCC-N3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 7
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case DirectFET™ Isometric SC
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Power Dissipation 41W
  • Power Dissipation-Max 2.5W Ta 41W Tc
  • Published 2015
  • Pulsed Drain Current-Max (IDM) 220A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 6.95m Ω @ 33A, 10V
  • REACH SVHC No SVHC
  • Rise Time 123ns
  • RoHS Status ROHS3 Compliant
  • Series HEXFET®
  • Terminal Position BOTTOM
  • Threshold Voltage 4V
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 50μA

Product Description

Infineon Technologies

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