NVD6820NLT4G
Item specifics
- Case Connection DRAIN
- Continuous Drain Current (ID) 10A
- Current - Continuous Drain (Id) @ 25°C 10A Ta 50A Tc
- Drain Current-Max (Abs) (ID) 50A
- Drain to Source Voltage (Vdss) 90V
- Drain-source On Resistance-Max 0.0205Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- DS Breakdown Voltage-Min 90V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 59 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 4209pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status LIFETIME (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Power Dissipation 4W
- Power Dissipation-Max 4W Ta 100W Tc
- Published 2013
- Rds On (Max) @ Id, Vgs 16.7m Ω @ 20A, 10V
- Reach Compliance Code not_compliant
- Rise Time 98ns
- RoHS Status ROHS3 Compliant
- Surface Mount YES
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Element Material SILICON
- Turn On Delay Time 19 ns
- Turn-Off Delay Time 36 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
Product Description
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