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FCH110N65F-F155
FCH110N65F-F155

FCH110N65F-F155

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Product Code: FCH110N65F-F155
Availability: In Stock
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Price: $14.30
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Item specifics

  • Avalanche Energy Rating (Eas) 809 mJ
  • Continuous Drain Current (ID) 35A
  • Current - Continuous Drain (Id) @ 25°C 35A Tc
  • Drain to Source Breakdown Voltage 650V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 5.7 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 4895pF @ 100V
  • JEDEC-95 Code TO-247AB
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Lifecycle Status ACTIVE (Last Updated: 6 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 357W Tc
  • Rds On (Max) @ Id, Vgs 110m Ω @ 17.5A, 10V
  • Reach Compliance Code not_compliant
  • Resistance 110mOhm
  • Rise Time 21ns
  • RoHS Status ROHS3 Compliant
  • Series FRFET®, SuperFET® II
  • Terminal Finish Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 31 ns
  • Turn-Off Delay Time 89 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 5V @ 3.5mA
  • Weight 6.39g

Product Description

ON Semiconductor

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