IPA50R199CPXKSA1
Item specifics
- Case Connection ISOLATED
- Continuous Drain Current (ID) 17A
- Current - Continuous Drain (Id) @ 25°C 17A Tc
- Drain to Source Breakdown Voltage 500V
- Drain-source On Resistance-Max 0.199Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 550V
- Element Configuration Single
- Fall Time (Typ) 10 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Halogen Free
- Height 16.15mm
- HTS Code 8541.29.00.95
- Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 100V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Length 10.65mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Through Hole
- Nominal Vgs 3 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-220-3 Full Pack
- Packaging Tube
- Part Status Not For New Designs
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Power Dissipation 139W
- Power Dissipation-Max 139W Tc
- Published 2008
- Pulsed Drain Current-Max (IDM) 40A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 199m Ω @ 9.9A, 10V
- REACH SVHC No SVHC
- Rise Time 14ns
- RoHS Status ROHS3 Compliant
- Series CoolMOS™
- Surface Mount NO
- Terminal Finish Tin (Sn)
- Termination Through Hole
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 35 ns
- Turn-Off Delay Time 80 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.5V @ 660μA
- Width 4.85mm
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