IRF6645TR1PBF
Item specifics
- Contact Plating Copper, Silver, Tin
- Continuous Drain Current (ID) 4.5A
- Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
- Current Rating 5.7A
- Drain to Source Breakdown Voltage 100V
- Drain to Source Resistance 28mOhm
- Drain to Source Voltage (Vdss) 100V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 100V
- Element Configuration Single
- Fall Time (Typ) 5.1 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 530μm
- Input Capacitance 890pF
- Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
- Lead Free Lead Free
- Length 4.826mm
- Max Operating Temperature 150°C
- Min Operating Temperature -40°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 3 V
- Number of Elements 1
- Number of Pins 5
- Operating Temperature -40°C~150°C TJ
- Package / Case DirectFET™ Isometric SJ
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Power Dissipation 42W
- Power Dissipation-Max 2.2W Ta 42W Tc
- Published 2005
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V
- Rds On Max 35 mΩ
- REACH SVHC No SVHC
- Recovery Time 47 ns
- Resistance 35MOhm
- Rise Time 5ns
- RoHS Status RoHS Compliant
- Series HEXFET®
- Supplier Device Package DIRECTFET™ SJ
- Termination SMD/SMT
- Threshold Voltage 3V
- Turn On Delay Time 9.2 ns
- Turn-Off Delay Time 18 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4.9V @ 50μA
- Voltage - Rated DC 100V
- Width 3.95mm
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