STB28N60M2

STB28N60M2

Product Code: STB28N60M2
Availability: In Stock
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Price: $7.15
0 sold. Only 18198 remain

Item specifics

  • Avalanche Energy Rating (Eas) 350 mJ
  • Base Part Number STB28N
  • Case Connection DRAIN
  • Contact Plating Tin
  • Continuous Drain Current (ID) 22A
  • Current - Continuous Drain (Id) @ 25°C 22A Tc
  • Drain to Source Breakdown Voltage 600V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 8 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
  • JESD-30 Code R-PSSO-G2
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Cut Tape (CT)
  • Part Status Active
  • Power Dissipation-Max 170W Tc
  • Pulsed Drain Current-Max (IDM) 88A
  • Rds On (Max) @ Id, Vgs 150m Ω @ 11A, 10V
  • Rise Time 7.2ns
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ II Plus
  • Terminal Form GULL WING
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 14.5 ns
  • Turn-Off Delay Time 100 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Weight 3.949996g

Product Description

STMicroelectronics

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